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Summary Application Number: 200610039199.4 Application date: 2006.03.23 name: Double-layer solar cell and manufacturing method thereof Public (announcement) number: CN1851935 Public (announcement) day: 2006.10.25 Main classification number: H01L31/042 (2006.01)I The original application number of the division: Classification number: H01L31/042(2006.01)I; H01L31/075(2006.01)I; H01L31/18(2006.01)I Award day: priority: Application (patent) person: Jiangyan Xinjin Solar Photovoltaic Manufacturing Co., Ltd. address: 225500 Jiangyan High-tech Entrepreneurship Center, Jiangsu Province (South Side of New 328 National Road) Invention (design) person: Cheng Shunkang;Gold Deer; Cheng Li; Wu Juan; Wang Xiujuan International application: International announcement: Enter country date: Patent agency: agent:
The invention discloses a double-junction solar cell and a manufacturing method thereof, and the structure is a substrate (4) - a silver electrode layer (5) / a metal oxide transparent conductive layer (6) / an n-type microcrystalline silicon (7) - I-type microcrystalline silicon (8)-p type amorphous silicon or p-type microcrystalline silicon (9) / metal oxide transparent conductive layer (10) / n type microcrystalline silicon (11) - i type amorphous silicon (12 ) p-type microcrystalline silicon (13) / ITO transparent conductive layer (14). The i-layer in the bottom pin junction is formed of microcrystalline silicon, which can avoid the phenomenon that the solar cell is degraded due to long-time illumination, and the i-layer of the upper pin junction is plated with amorphous silicon, due to the amorphous silicon. The light absorption effect is better than that of microcrystalline silicon, so that the spectral absorption of the solar cell is increased, and a highly efficient solar cell can be obtained. The invention improves the conversion efficiency and service life of the battery.
October 10, 2024